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In this study, we investigate the temperature-dependent performance of solar cells with TMO-based passivating contacts at various illumination intensities. We then compare their performance to that of standard …
In this study, we investigate the temperature-dependent performance of solar cells with TMO-based passivating contacts at various illumination intensities. We then compare their performance to that of standard …
This work presents dc characteristics (gain and leakage current) of a GaN/InGaN/ZnO npn collector-up heterojunction bipolar transistor (HBT) measured at 300, 200, and 100 K. The GaN-based epilayers of HBT were grown by metallorganic chemical vapor deposition, and the n-ZnO film was then deposited on top of p-InGaN by sputtering. X-ray …
The room temperature I–V curves of the presented rGO/Si Schottky junction betavoltaic battery in the dark case and under the illumination of the radiation source are displayed in Fig. 5. It can be seen that there is an increase in the negative current density during radiation exposure to Ni 63, which is due to the betavoltaic effect.
Understanding the charge carrier transport characteristics at the graphene-GaN interface is of significant importance for the fabrication of efficient photoresponsive devices. Here, we report on the temperature dependent diode and photovoltaic characteristics of a graphene/n-GaN heterostructure based Schottky junction. The graphene/n-GaN heterojunction showed …
Influence of Oxygen Annealing on Temperature Dependent Electrical Characteristics of Ga2O3/4H-SiC Heterojunction Diodes Seung Hwan Chung *, Hyung Jin Lee, Hee Jae Lee *, Dong Wook Byun and Sang Mo Koo † *†Department of Electronic Materials
The temperature dependent diode and photovoltaic characteristics of the graphene/h-BN/n-Si heterojunction solar cell can be crucial to understand the charger carrier separation and recombination dynamics at the MIS structure interface.
Graphene-on-semiconductor heterojunction solar cell is an emerging class of photovoltaics (PV) with potential for efficient and reliable energy conversion systems. The interface between graphene and a lightly doped semiconductor plays a key role in charge-carrier separation and recombination dynamics. Owing to the low Schottky barrier height (φ<SUB>SBH</SUB>) …
Fabricating perovskite heterojunctions is challenging. Now, Ji et al. form a phase heterojunction with two polymorphs of CsPbI3, leading to 20.1% efficiency in inorganic perovskite solar cells.
Two dimensional (2D) MXene decorated by the SnO 2 nanoparticles has been successfully synthesized by the hydrothermal method. The formed MXene/SnO 2 heterojunction based chemirestistive-type sensors exhibit an excellent sensitivity and selectivity to different concentrations of NH 3 from 0.5 to 100 ppm at room temperature. ...
Battery Energy is an interdisciplinary journal focused on advanced energy materials with an emphasis on batteries and their empowerment processes. Abstract ZnO nanorods (NRs) heterojunction arrays …
The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structu Tzu-Pin Chen, Wei-Hsin Chen, Chi-Jhung Lee, Kuei-Yi Chu, Li-Yang Chen, Ching-Wen Hung, Tsung-Han Tsai, Shiou-Ying Cheng, Wen-Chau Liu; Temperature-dependent characteristics of an InP/InGaAs …
This paper reports the temperature-dependant electrical characteristics of n-ZnO hexagonal nanorods/p-Si heterojunction diodes. The n-ZnO hexagonal nanorods were grown on p-Si substrate by a simple thermal evaporation process using metallic zinc powder in the presence of oxygen. The spectroscopic ch …
This research showcases the progress in pushing the boundaries of silicon solar cell technology, achieving an efficiency record of 26.6% on commercial-size p-type wafer. The lifetime of the gallium-doped …
SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper. Based on existing research, breakdown point transfer technology (BPT) was used to optimize SiC/Si VDMOS. Simulation results showed that the BV of the SiC/Si heterojunction …
DOI: 10.1109/JPHOTOV.2016.2604574 Corpus ID: 8250092 Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics @article{Nogay2016NanocrystallineSC, title={Nanocrystalline Silicon ...
The fabrication of perovskite heterojunctions is challenging. Mali et al. develop a heterojunction with two different crystalline phases of CsPbI3, achieving 21.5% and 18.4% efficiencies on small ...
1 Introduction Advances in luminescent materials have greatly enhanced the development of science and technology. [1-3] Depending on the source of excitation, for example, electromagnetic radiation, stress (mechanical force), electric current or field, temperature, or magnetic field, different types of luminescence can be observed, such as photoluminescence …
Silicon heterojunction (SHJ) solar cells have reached high power conversion efficiency owing to their effective passivating contact structures. Improvements in the …
Heterojunction formed at the amorphous/crystalline silicon (a-Si:H/c-Si) interface exhibits distinctive electronic characteristics for application in silicon heterojunction (SHJ) solar cells. The incorporation of an ultrathin …
Figure 9: MTTF vs. junction temperature for GVA-81+ HBT-based MMIC amplifier. Note that at max operating temperature and nominal current, Tj is 121 . From Figure 7 at 121, MTTF is 3.6 x10 6 hours (or 415 years) at 90% confidence. This is extremely
Battery Energy is an interdisciplinary journal focused on advanced energy materials ... (NRs) heterojunction arrays have been widely used in photovoltaic cells owing to the outstanding photoelectrical chracteristics, high stability and low cost. ... (CVD), 14-22 microwave method, 23, 24 hydrothermal method, 25-35 low-temperature oxidation ...
A solar cell and window layer technology, applied in the field of solar cells, can solve problems such as difficulty in finding, and achieve the effect of solving the problem of window layer material selection [0019] Such as figure 1 As shown, taking a single-junction solar cell as an example, the heterojunction solar cell of the present invention includes a GaAs …
Herein, bismuth telluride (Bi2Te3) thin films thermally grown under vacuum have been integrated with p-Si in a heterojunction configuration of Au/Bi2Te3/p-Si/Al for resistive switching random-access memory (RRAM) applications. The quality of the grown films was evaluated in terms of crystal structure and films'' morphology using XRD and FE-SEM …
Moreover, the photoresponse characteristics of the heterojunction were measured with different wavelengths (650 nm and 365 nm) (Fig. 2c,d). The heterojunction also responds to 650 nm wavelength ...
Temperature dependent characteristics of poly(3 hexylthiophene)-fullerene based heterojunction organic solar cells D. Chirvase; D. Chirvase Energy and Semiconductor Research, University of Oldenburg, D-26111 Oldenburg, Germany ... PCBM/Al solar cells was done by analyzing the dependence of current density–voltage characteristics on ...
The impact of thermal annealing temperature on the low-frequency noise characteristics of P3HT:PCBM bulk heterojunction organic solar cells November 2014 Solar Energy Materials and Solar Cells 130 ...
This article reviews the development status of high-efficiency c-Si heterojunction solar cells, from the materials to devices, mainly including hydrogenated amorphous silicon (a …
We present a GeSe/SnSe van der Waals heterojunction fabricated using the wet transfer technique. GeSe and SnSe were synthesized via a low-temperature and atmospheric-pressure chemical vapor deposition method. The GeSe/SnSe heterostructure photodetector demonstrates remarkable rectification characteristics, boasting a rectification ratio of 102, along …
The electrical properties of the fabricated heterojunction assembly were examined at different temperatures (298∼398 K) in both reverse and forward biased conditions, and a good stability was observed over the entire temperature range. A reduction in the turn-on and breakdown voltage was observed with increasing temperature.
DOI: 10.1016/J RFIN.2016.08.004 Corpus ID: 113514315; Temperature-dependent electrical transport characteristics of a NiO/GaN heterojunction diode @article ...
Silicon heterojunction (SHJ) solar cells have achieved a record efficiency of 26.81% in a front/back-contacted (FBC) configuration. Moreover, thanks to their advantageous …
In addition to metal–metal heterojunction, the noble metal heterojunction was prepared via using appropriate carrier to decrease the dosage of noble metal and add catalytically active sites of noble metal heterojunction. Braman et al. grew one-dimensional (1D) and high crystallization rutile-structured RuO 2 nanowires on the surface of carbon nitride (1D-RuO 2 …
Figure 9: MTTF vs. junction temperature for GVA-81+ HBT-based MMIC amplifier. Note that at max operating temperature and nominal current, Tj is 121℃ . From Figure 7 at 121℃, MTTF is 3.6 x10 6 hours (or 415 years) at 90% confidence. This is extremely reliable. Mini-Circuits parts are designed with high reliability as a design requirement.
Silicon heterojunction (SHJ) solar cells have achieved a record efficiency of 26.81% in a front/back-contacted (FBC) configuration. Moreover, thanks to their advantageous high V OC and good infrared response, SHJ solar cells can be further combined with wide bandgap perovskite cells forming tandem devices to enable efficiencies well above 33%. In this …
In the mid–late 1990s, only a few key characteristics of the defect were known, including the reversible nature during annealing at temperatures above ≈ 200 °C and the ability to trigger degradation both via …
heterojunction. The YBCO/NSTO heterojunction was irradiated with UV light, and the photovoltaic characteristics of YBCO/NSTO heterojunction were stud-ied within the temperature range 50–300 K. The results show that YBCO/ NSTO/In has a significant photovoltaic effect with a high open-circuit voltage (V OC). At 300 K, the V
DOI: 10.1016/j.vacuum.2024.113103 Corpus ID: 268321434; Interface characteristics of InP/Si heterojunction fabricated by low-temperature wafer bonding based on microcrystalline Ge interlayer
1 Temperature Dependent Device Characteristics of Graphene/h-BN/Si Heterojunction Chen Wang, Sanjay K. Behura*, and Vikas Berry* Department of Chemical Engineering, University of Illinois at Chicago, 810 S. Clinton Street, Illinois 60607, United States
The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations.
Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector Tzu-Pin Chen,1 Wei-Hsin Chen,1 Chi-Jhung Lee,1 Kuei-Yi Chu,1 Li-Yang Chen,1 Ching-Wen Hung,1 Tsung-Han Tsai,1 Shiou-Ying Cheng,2 and Wen-Chau Liu1,a 1Institute of Microelectronics, Department of Electrical Engineering, National Cheng …
Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector Tzu-Pin Chen,1 Wei-Hsin Chen,1 Chi-Jhung Lee,1 Kuei-Yi Chu,1 Li-Yang Chen,1 Ching-Wen Hung,1 Tsung-Han Tsai,1 2 1,a 1 ...
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